AM2317P analog power preliminary publication order number: ds-am2317_c 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. p - channel logic level mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-23 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units t <= 5 sec 250 steady-state 285 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r t hja v ds (v) r ds(on) ( ) i d (a) 0.30 @ v gs = -10 v -1.0 0.50 @ v gs = -4.5v -0.9 -30 product summary symbol maximum units v ds -30 v gs 20 t a =25 o c 0.9 t a =70 o c 0.75 i dm 10 i s 0.4 a t a =25 o c 0.5 t a =70 o c 0.42 t j , t stg -55 to 150 o c drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage d s g
AM2317P analog power preliminary publication order number: ds-am2317_c 2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically dis claims any and all liability, including without lim itation special, consequential or incidental damages. ?typical? parameters which may be provide d in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typical? must be validate d for each customer application by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situ ation where personal injury or death may occur. should buyer purchase or use apl products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max drain-source breakdown voltage v (br)dss v gs = 0 v, i d = -250 ua -30 v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -10 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -0.80 -1.7 -2.6 v on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -2 a v gs = -10 v, i d = -1.0 a 0.25 0.30 v gs = -4.5 v, i d = -0.9 a t j = 55 o c 0.53 0.66 v gs = -4.5 v, i d = -0.9 a 0.45 0.50 forward tranconductance a g fs v ds = -5 v, i d = -1.1 a 2 s diode forward voltage v sd i s = -0.4 a, v gs = 0 v -0.70 -1.2 v total gate charge q g 2.0 3.0 gate-source charge q gs 0.5 gate-drain charge q gd 1.1 turn-on delay time t d(on) 8 16 rise time t r 16 32 turn-off delay time t d(off) 36 93 fall-time t f 33 94 v ds = -10 v, v gs = -5 v, i d = -0.9 a specifications (t a = 25 o c unless otherwise noted) switch off characteristics test conditions zero gate voltage drain current i dss a symbol parameter limits nc v ds = -10 v, i d = -0.9 a, r g = 50 , v gen = -10 v switch on characteristics unit switching drain-source on-resistance a r ds(on) ns dynamic b
AM2317P analog power preliminary publication order number: ds-am2317_c 3 typical electrical characteristics figure 1. on-region characteristics figure 2. on- resistance variation with drain current and gate voltage figure 3. on-resistance variation with temperature figure 4. on-resistance variation with gate to source voltage figure 5. transfer characteristics figure 6. body di ode forward voltage variation with source current and temperature
AM2317P analog power preliminary publication order number: ds-am2317_c 4 typical electrical characteristics normalized thermal transient impedance, junction to ambi ent figure 11. transient thermal response curve figure 9. capacitance characteristic figure 10. gate charge characteristic figure 7. breakdown voltage with temperature figure 8. body diode forward voltage with source current & temperature
AM2317P analog power preliminary publication order number: ds-am2317_c 5 typical electrical characteristics figure 13. transconductance variation with current & temperature figure 14. maximum safe operation area figure 15. sot-3 maximum steady- state variation power dissipation versus copper pad area figure 16. maximum state-state drain current versus copper pad area
AM2317P analog power preliminary publication order number: ds-am2317_c 6 package information
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